Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
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We compared the trimethylgallium (TMG) reaction on an As-stabilized surface of GaAs with that on a Ga-stabilized surface using a quadrupole mass spectrometer equipped with a cold aperture. It was found that, although TMG thermally decomposed on both the As-stabilized and Ga-stabilized surfaces, Ga-containing decomposition products did not desorb from the As-rich surface. A new growth mechanism for GaAs atomic layer epitaxy, related to this desorption difference, is also discussed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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