Role of an Electron Beam in the Modification of a GaAs Oxide Mask for <I>in situ</I> EB Lithography
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概要
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The electron beam (EB)-induced modification of GaAs oxide for the <I>in situ</I> lithography process has been investigated. The oxide formed on an as-grown GaAs surface is irradiated with an electron beam at doses in the range of 1.5×10<SUP>17</SUP> to 4×10<SUP>19</SUP> electrons/cm<SUP>2</SUP> at beam energies of 10–25 keV. Subsequent Cl<SUB>2</SUB> gas exposure results in selective etching only in the irradiated area. EB-induced modification of the GaAs oxide is found to involve a partial removal of oxygen by <I>in situ</I> Auger measurements. The threshold dose for the etching depends on electron energy, whereas it is independent of the wafer temperature between 25 and 100°C during EB-irradiation. These results indicate that the modification is not a thermally activated process, but a direct interaction of the electron beam with the oxide.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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