Fabrication of Thin Silicon Wires by Anisotropic Wet Etching of SOI Structures
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A fabrication method of thin single-crystalline silicon wires on SiO<SUB>2</SUB> is reported. The wires are fabricated by anisotropic wet etching of (110) and (100) SOI wafers. We obtained a thin (110) SOI wire of 0.2 μm width and 0.2 μm height with a rectangular cross section. Since the (110) SOI wires are enclosed by a pair of ultraflat {111} side walls parallel to each other, this method has the potential to form ultranarrow wires by careful control of the etching conditions.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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