Si Wafer Bonding with Ta Silicide Formation

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概要

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• Bonded SOI wafers with a Ta silicide layer are fabricated. The 0.08-μm-thick Ta film sputtered on an oxidized Si wafer is bonded to another Si wafer with a native oxide. When the wafers are uniformly bonded by pulse-field-assisted bonding, Ta silicide forms at the interface. The buried Ta silicide layer is 0.12 μm thick and the sheet resistance is 9 Ω/\Box. From a SIMS analysis, Ta decreases rapidly in Si. This proves that a pure SOI layer for devices can be obtained.

• 公益社団法人 応用物理学会の論文

公益社団法人 応用物理学会 | 論文

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