Evaluation of LaB<SUB>6</SUB> Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
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The work function of LaB<SUB>6</SUB> thin film has been evaluated from the LaB<SUB>6</SUB>/SiO<SUB>2</SUB>/Si metal-oxide-semiconductor (MOS) structure. Thermally stable MOS diodes with LaB<SUB>6</SUB> gate were fabricated. From capacitance-voltage characteristics of MOS diodes, the work function of LaB<SUB>6</SUB> film was found to be 3.5 eV. This result shows that LaB<SUB>6</SUB> is a very promising candidate for a gate material of depletion MOSFET operated at low temperature without carrier freeze-out.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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