Enhanced Diffusion of Implanted Arsenic in Silicon at an Early Stage of Annealing
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The diffusion profiles of the heavily ion-implanted arsenic (As) in silicon by short annealing time were examined by Hall effect measurements in conjunction with anodization and layer removal. The arsenic diffusion profiles obtained by computer simulation were compared with the measured results. It is shown by this comparison that the diffusion of the arsenic atoms is enhanced at an early stage of annealing.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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