DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH<SUB>3</SUB>
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Deep level transient spectroscopy has been carried out in <I>n</I>-GaAs grown by gas source molecular beam epitaxy (GSMBE) using triethylgallium (TEG) and AsH<SUB>3</SUB>. Seven electron traps have been observed, five of which correspond to those reported in <I>n</I>-GaAs grown by conventional MBE. The concentration of <I>EL</I>2 was below the detection limit of about 1×10<SUP>12</SUP> cm<SUP>−3</SUP>. The concentrations of the dominant traps, which correspond to <I>M</I>1, <I>M</I>2′ and <I>M</I>4, decreased as the AsH<SUB>3</SUB>/TEG flow-rate ratio increased. High-quality GaAs layers with a total trap concentration as low as about 2×10<SUP>13</SUP> cm<SUP>−3</SUP> have been grown even at a low growth temperature of 550°C.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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