High Aluminum Composition AlGaInP Grown by Metalorganic Chemical Vapor Deposition —Impurity Doping and 590 nm (Orange) Electroluminescence—
スポンサーリンク
概要
- 論文の詳細を見る
Improvement in doping characteristics and luminescence efficiency for MOCVD grown (Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>)<SUB>0.5</SUB>In<SUB>0.5</SUB>P was obtained by introducing a simple air-lock system. A few hundredths Ωcm resistivity was obtained for the entire aluminum composition n-type (Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>)<SUB>0.5</SUB>In<SUB>0.5</SUB>P and less than a few tenths Ωcm resistivity was obtained for p-type (Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>)<SUB>0.5</SUB>In<SUB>0.5</SUB>P with <I>x</I>\lesssim0.6. 590 nm orange electroluminescence from double heterostructure diodes and 555 nm green photoluminescence, the shortest wavelengths ever-reported for (Al<I><SUB>x</SUB></I>Ga<SUB>1−<I>x</I></SUB>)<SUB>0.5</SUB>In<SUB>0.5</SUB>P system, were observed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
- Electron Channelling Effect in an Al–Fe–Cu Quasicrystal
- Construction and Performance of a Large-Aperture Wire-Chamber Spectrometer for Pion Scattering Experiments at KEK
- Effect of Plasma Injection on Cold Wall Type MHD Generator
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI
- Boundary Layer Cooling Effect on Semi-Hot Wall Type MHD Channel