Excitonic Absorption Spectra of GaAs–AlAs Superlattice at High Temperature
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Optical absorption spectra of MBE grown GaAs–AlAs superlattices with various thickness of the potential-well layer were measured in the temperature range up to 500 K. The excitonic absorption peak is observed even at a temperature of 500 K or higher. The broadening parameter <I>Γ</I> for the exciton peak was determined by a curve fitting. This parameter determines the temperature limit below which double absorption peaks due to heavy and light hole exciton are observed.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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