MOCVD-Grown Al<SUB>0.5</SUB>In<SUB>0.5</SUB>P–Ga<SUB>0.5</SUB>In<SUB>0.5</SUB>P Double Heterostructure Lasers Optically Pumped at 90 K
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Undoped Al<SUB>0.5</SUB>In<SUB>0.5</SUB>P–Ga<SUB>0.5</SUB>In<SUB>0.5</SUB>P double heterostructure was grown on (100) GaAs by metalorganic chemical-vapor deposition for the first time. A mirror-like grown surface was obtained. Over ten-times stronger photoluminescence-intensity was gained from the sandwitched Ga<SUB>0.5</SUB>In<SUB>0.5</SUB>P layer, than that from a single epitaxially-grown Ga<SUB>0.5</SUB>In<SUB>0.5</SUB>P-layer on (100) GaAs, indicating that high-quality Al<SUB>0.5</SUB>In<SUB>0.5</SUB>P–Ga<SUB>0.5</SUB>In<SUB>0.5</SUB>P heterointerfaces are formed in the double heterostructure. A lasing action by optical pumping with an argon ion laser was observed in the double heterostructure at 90 K. The observed stimulated emission wavelength was 6470 Å.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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