Formation of Shallow Junction of Boron Using Excimer Laser
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概要
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The very shallow junction of boron has been formed with the combination of ArF excimer laser and BF<SUB>3</SUB>gas. Since BF<SUB>3</SUB>gas is transparent at around 200 nm, boron atoms are obtained by pyrolysis of BF<SUB>3</SUB>gas. Sheet resistance can be controlled by the number of pulses and BF<SUB>3</SUB> pressure under the condition of constant beam energy. From SEM analysis and Wright etching, any damages and defects are not observed on silicon surface at 1.2 J/cm<SUP>2</SUP>. Junction depths depend on the number of pulses, and the shallowest junction of -360Ådepth is obtained by 5 pulses. From the results of SIMS and four-point probe measurements, it is confirmed that nearly all boron atoms doped are electrically activated up to the concentration of 10<SUP>20</SUP>cm <SUP>-3</SUP>. Spatial uniformity within the irradiated area is also confirmed. A diode fabricated by laser doping shows a good I-V characteristics.
- 社団法人 レーザー学会の論文
社団法人 レーザー学会 | 論文
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