タイトル無し
スポンサーリンク
概要
- 論文の詳細を見る
MBE is no longer a crystal growth technique in laboratories but has recently become a common production technology. GaAs devices, especially HEMT etc. have played an important role in making MBE technique thus popular. The progress of MBE technique also caused the progress of academic research in crystal growth and surface physics. In this paper, a couple of topics of the researches and developments of MBE is described. The present status of the device applications of it is also discussed.
- 公益社団法人 日本表面科学会の論文
公益社団法人 日本表面科学会 | 論文
- An XPS Analysis of the Interfacial Interaction between Oxides and Epoxy Resin.
- A Structure Analysis of Langmuir-Blodgett Magnetic Films by X-ray Diffraction.
- Structure and Reactivity of Surface Compounds Formed on Single Crystal Metal Surfaces During Catalytic Reactions.
- Atomic-Layer Etching of Si by Low Energy Ion Irradiation.
- Microstructure Observations of (Nd, Ce)2CuO4 Superconducting Thin Films by Using Cross-Sectional HRTEM and the Mechanism f Film Growth.