A Novel Approach for Quantifying Contamination in Multiply Charged Implantation
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概要
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A novel approach for quantifying impurity levels in doubly charged implantation is proposed and verified. It is proved to be quantitative in nature and easier to implement in a production environment than the existing Faraday cup and electrostatic methods. Application of this method is demonstrated in a phosphorous double-charged implantation. Quantitative analysis of the impurity level is also presented.
- 公益社団法人 応用物理学会の論文
公益社団法人 応用物理学会 | 論文
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