Control of C60 Behavior for High Yield Synthesis of N@C60 in RF-Plasma

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The nitrogen-atom endohedral fullerene (N@C60) with relatively higher purity [molar concentration ratio of N@C60 to pristine fullerene (C60)] has been synthesized by controlling plasma ion irradiation energy (Ei) and C60 behavior. We have examined the relationship between the synthesis purity of N@C60 and Ei which is controlled by changing the substrate bias voltages (Vsub) and gas pressure (PN2) during the plasma irradiation process. It has been clarified that there is an optimum condition of the nitrogen plasma for the high-purity synthesis of N@C60, which consists of the high-density nitrogen-molecular ions (N2+) with suitable Ei from 40 to 80 eV. In addition, control of C60 behavior contributes to an increase in the reaction between C60 and N2+ to form N@C60, resulting in the synthesis of N@C60 with the highest purity of 0.56 % in the world.
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