Free Electron Laser Irradiation Effect on Single-Walled Carbon Nanotube Growth

概要

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For field effect transistor using single-walled carbon nanotubes (SWNTs) with extremely dense packed electronic devices, diameter, alignment, and chirality of the SWNTs should be controlled. We propose a novel technique to grow the selective SWNTs with specific chirality using free electron laser (FEL) irradiation during growth. The Co/Mo catalyst was used for alcohol catalytic chemical vapor deposition (ACCVD). From the results of Raman spectra, both of conductive and semiconductive SWNTs grew without FEL irradiation. With 800 nm FEL irradiation during growth, only semiconductive SWNTs grew, the chirality of which was expected to be (14,0), (10,6), (9,7), (11,4), (10,5) with approximately 1.1 nm in the diameter. The number of possible chirality of ACCVD grown SWNTs with FEL irradiation was much reduced to 5 from 18.
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