静的高圧合成法によるBドープダイヤモンド結晶の合成

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概要

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• High-quality boron-doped diamonds were synthesized from four boron-doped carbon sources with different boron concentration using a static high-pressure process with metal solvent. Three diamond pellets obtained from the carbon sources with boron concentrations less than the solubility limit showed a homogeneous appearance and obvious X-ray diffraction patterns characteristic of diamond. The electrically-conducting diamond with 0.2 mass% of boron showed the boron-bound exciton peak characteristic of boron doping in the cathode luminescence spectra, indicating its ability as a semiconductor.

著者

• 福長 脩

  Research Fellow Nippon Institute of Technology, Professor Emeritus Tokyo Institute of Technology, AceTec Co., Ltd.

• 田尾 理恵

  Toyo Tanso Technology Center, Toyo Tasno Co., Ltd.

関連論文

• 静的高圧合成法によるBドープダイヤモンド結晶の合成

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