Orientation Control and Angle-resolved Photoemission Studies of Organic Epitaxial Thin Films on Bismuth-terminated Silicon Surfaces

概要

論文の詳細を見る
The angle-resolved photoemission studies (ARPES) of organic semiconductors is the key to understand fundamental parameters in the carrier transport, such as transfer integrals, effective mass, and carrier-phonon coupling constant. The ARPES of organic semiconductors, however, requires well-defined, single-crystalline and highly conductive samples. Since organic semiconductors have extremely low conductivity with low symmetry unit cells, the number of ARPES research was limited, which was an obstruction to developing synthesis policy for high mobility materials. In this review, we will summarize one of the successful strategy for preparing quasi-singly-oriented and highly-conductive sample for ARPES. We will demonstrate that bismuth terminated silicon surface is an ideal surface to grow epitaxial organic films with practically important "standing" orientation. It was also confirmed that quasi-single crystalline film was grown by using vicinal surfaces and reducing surface symmetry. We will also present the band dispersion results with key parameters and discuss future prospects.