Modeling Electromigration for Microelectronics Design
スポンサーリンク
概要
- 論文の詳細を見る
Computer simulation of electromigration (EM) in microelectronics devices has been reviewed and a multi-physics numerical simulation method has been proposed and developed so that the electric current, temperature, stress can be solved simultaneously and the vacancy concentration can be predicted in a seamless framework. The design considerations for resisting EM is also discussed in this work and a shunt structure for solder joint pad is proposed and its potential for the reduction of EM risk is demonstrated.
著者
-
BAILEY Chris
School of Computing and Mathematical Sciences, University of Greenwich
-
LU Hua
School of Computing and Mathematical Sciences, University of Greenwich
-
CHAN Yancheong
Department of Electronic Engineering, City University of Hong Kong
-
MANNAN Samjid
Physics Department, School of Natural & Mathematical Sciences, King's College London
-
XU Sha
Department of Electronic Engineering, City University of Hong Kong
-
ZHU Xiao
School of Computing and Mathematical Sciences, University of Greenwich
-
KOTADIA Hiren
Physics Department, School of Natural & Mathematical Sciences, King's College London