3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE

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概要

• 論文の詳細を見る

• In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized for 3.5-3.8GHz band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations were made on low loss Rogers RT5880 dielectric material which has 0.254mm thickness and 2.2 dielectric constant. Proposed balanced class-E PA has approximately 20W (43dBm) output power with 80% peak power added efficiency (PAE) and shows a very favorable combination of output power, PAE and suppressed even order harmonics compared to the single ended class-E PA prototype.

著者

• Yarman Siddik

  Department of Electrical-Electronics Engineering of Istanbul University

• Palamutçuogullari Osman

  Department of Electrical-Electronics Engineering of Istanbul Technical University

• Kizilbey Oguzhan

  The Scientific and Technological Research Council of Turkey

関連論文

• 3.5-3.8GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE

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