Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

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概要

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• The well composition dependence of threshold current density (Jth) for a GRIN SCH AlGaInAs/InP 1.5% compressive strained single quantum well (SQW) laser operating at 1.55μm has been studied. High electron confinement energy of 0.25eV was obtained at a lower well composition of 0.09 with 7.1nm thick well. The threshold current density Jth has been calculated as a function of temperature. A minimum of Jth of 121Acm-2 was obtained for the devices with Al0.09Ga0.17In0.74As well, which is the lowest value ever reported at this wavelength. The characteristic temperature (T0) has been estimated to be 112 K from the Jth as a function of temperature.

著者

• WAKITA Koichi

  Chubu University Department of Electrical and Electronics Engineering

• Kayastha Madhu

  Chubu University Graduated School Of Electrical And Electronics Engineering

• Sapkota Durga

  Chubu University

関連論文

• Thermal Crosstalk in Integrated DFB Laser-EA Modulators
• The Temperature Dependence of Threshold Current and Efficiency of AlGaInAs and InGaAsP Lasers Related to Intervalence Band Absorption Loss
• Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers
• Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer Al_xGa_yIn_As Single Quantum Well Lasers

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