Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films

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概要

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• Polycrystalline Cu(In,Ga)Se2 (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH3)2), which is a less hazardous Se source than H2Se gas. CIGS films were fabricated at various Se(CH3)2 supply rates. We investigated the effect of the Se(CH3)2 supply rate on the crystal phase and surface morphology of the films.

著者

• Tahashi Masahiro

  Chubu Univ. Kasugai Jpn

• IDO Toshiyuki

  Chubu University

• IINUMA Kenji

  Chubu University

• GOTO Hideo

  Chubu University

• YOSHINO Kenji

  University of Miyazaki

• TAKAHASHI Makoto

  Chubu University

• TAHASHI Masahiro

  Chubu University

関連論文

• Epitaxial Growth of Vanadium-Doped ZnSe by MOVPE
• Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films
• Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se_2 Films
• Photoluminescence Study of AgInS2 by Using Confocal Microscopy System

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