Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices

スポンサーリンク

概要

• 論文の詳細を見る

• As MOS transistors are scaled down, the impact of randomly placed discrete charge (impurity atoms, traps and surface states) on device characteristics rapidly increases. Significant variability caused by random dopant fluctuation (RDF) is a direct result of this, which urges the adoption of new device architectures (ultra-thin body SOI FETs and FinFETs) which do not use impurity for body doping. Variability caused by traps and surface states, such as random telegraph noise (RTN), though less significant than RDF today, will soon be a major problem. The increased complexity of such residual-charge-induced variability due to non-Gaussian and time-dependent behavior will necessitate new approaches for variation-aware design.

著者

• Takeuchi Kiyoshi

  Renesas Electronics Corp.

関連論文

• Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices
• Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices

スポンサーリンク