多結晶Si-SiO2-Si構造におけるリン,ヒ素の挙動
スポンサーリンク
概要
- 論文の詳細を見る
Phosphorus and arsenic profiles in polycrystalline Si-SiO<SUB>2</SUB>-Si structures were studied by ion microanalyzer, sup Pressed of edge effects by electronic gating. The Pand As diffused in the poly-Si layer were very uniform and had atendency of pile-up at the ierface of poly-Si-Sio<SUB>2</SUB>. The oxides of highly doped poly-Si contained the same level of Pas in the poly-Si and in the case of As one-tenth of the initial concentration in the poly-Si layer.
- 日本質量分析学会の論文
著者
関連論文
- 2-8 差動形パルス回路を内蔵した64段BCD(Bulk Charge-transfer Device)アナログメモリ
- 多結晶Si-SiO2-Si構造におけるリン,ヒ素の挙動
- IMAによるシリコン中のリン,ヒ素の定量分析