Energy and Mass Analyses of Secondary Positive Ions from Silicon Wafer Surfaces

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概要

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• The kinetic energy distribution of ions liberated from a silicon wafer surface was measured. The primary ion was 8 keV O<SUP>+</SUP>. The energy distribution was analyzed using electric toroidal sector(re=212mm, φe=85°, c=0.5). Two new sharp energy peaks have been observed immediately below a giant sputtered ion peak. These energetically discrete sputtered ions were analyzed with a double focusing mass spectrometer. From the results of SIMS analyses, ions of the lowest energy peak have been identified as the ambient gas ions, ions of the next higher energy peak as those from the top surface, and ions of the giant energy peak as those from the bulk.

• 日本質量分析学会の論文

著者

• TAYA SHUNROKU

  Central Research Laboratory, Hitachi Ltd,

関連論文

• Third Order Transfer .Matrices for the Fringing Fields of an Electrostatic Hexapole Lens
• A Comparative Study of Solid Surface Analyses between Low Energy Ion Scattering Spectroscopy(ISS)and Secondary Ion Mass Spectroscopy(SIMS)
• A Portable Double Focusing Mass Spectrometer
• Energy and Mass Analyses of Secondary Positive Ions from Silicon Wafer Surfaces

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