Trachit change of the ZrSiO4 single crystal during crystal growth studied by the Na2O3V2O5 flux method.

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概要

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• The appearance and disappearance of the crystal faces of the ZrSiO<SUB>4</SUB> single crystal during crystal growth under the conditions of a growth temperature of 900 °C and a Δ<I>t</I> value (temperature difference) of 1 °C have been studied by means of the Na<SUB>2</SUB>O·3V<SUB>2</SUB>O<SUB>5</SUB> flux method. A spherical seed prepared from a natural zircon single crystal was used. The c{001}, a{100}, and m{110} appeared at the earliest stage, and next appeared r{115}, u{015}, p{111}, e{011}, and q{021} after 20 h of growth time. However, the u-face, r-face, and q-face disappeared after 400 h, and the c-face and a-face began to disappear after 500 h. The final morphology after 1400 h was a firstorder prism and a pyramid consisting of only the m-face and the p-face. It was found that the m-face and the p-face were dominant on a flux-grown ZrSiO<SUB>4</SUB> single crystal, and that this tendency was unchangeable after 2500 h.

• 公益社団法人 日本化学会の論文

著者

• Sumiyoshi Yoshihiro

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

• Ushio Masumi

  Department of Applied Chemistry, Faculty of Engineering, Gunma University

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• Trachit change of the ZrSiO4 single crystal during crystal growth studied by the Na2O3V2O5 flux method.

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