Electrical Properties of TeO<SUB>2</SUB>. I.

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概要

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• The electrical conductivity a of polycrystalline tellurium dioxide (paratellurite; purity: 6-nine) was measured as a function of the oxygen partial pressure (1–760 mmHg) at temperatures between 475 and 550°C. The relations between the experimental values of logσ and 1⁄<I>T</I> were well represented by straight lines, giving the apparent activation energy of about 1.36 eV. The oxygen-pressure dependence of the isothermal conductivity was well expressed by the σ∝<I>P</I>o<SUB>2</SUB><SUP>1⁄6</SUP> relation; this may be interpreted by assuming that electron holes with fullyionized oxygen interstitials predominantly act as charge carriers. The p-type behavior in the conduction process was also confirmed by thermal emf measurements.

• 公益社団法人 日本化学会の論文

著者

• Sasaki Tomoaki

  Institute of Inorganic Chemistry, Department of Chemistry, Nihon University

• Hijikata Kenzo

  Institute of Inorganic Chemistry, Department of Chemistry, Nihon University

• Doi Kazuo

  Institute of Inorganic Chemistry, Department of Chemistry, Nihon University

関連論文

• Defect Structure of Indium Oxide : I. Dependence of Oxygen Partial Pressure and Temperature on the Electrical Conductivity and Thermoelectric Power of High Purity Sintered Indium Oxide
• Electrical Properties of TeO2. I.

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