Resistmetric study of the potential-sensitive surface layer formed on VO2 electrode in a neutral solution.
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概要
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The formation of a potential-dependent surface layer on VO<SUB>2</SUB> electrode has been investigated from the change in conductance of a thin VO<SUB>2</SUB> film electrode by galvanostatic polarization. The VO<SUB>2</SUB> electrode dissolved as vanadate with 100% current efficiency by anodic polarization. At potentials negative to the immersion potential, the VO<SUB>2</SUB> electrode functioned as an insoluble electrode with the formation of the potential-dependent surface layers of the vanadium oxides by lower valence. The change in composition of the surface layers was traced by resistmetry and coulometry, and illustrated against the amount of electric charge passed, taking V<SUB>7</SUB>O<SUB>13</SUB>, V<SUB>6</SUB>O<SUB>11</SUB>, V<SUB>5</SUB>O<SUB>9</SUB>, V<SUB>4</SUB>O<SUB>7</SUB>, V<SUB>3</SUB>O<SUB>5</SUB>, and V<SUB>2</SUB>O<SUB>3</SUB> as the possible oxides. The composition at vanadium oxides of outer-most layer was plotted against the electrode potential. The plot shows a multi-step figure as in the equilibrium partial pressures of oxygen on vanadium oxides at high temperatures, suggesting a model in which the composition of the outer-most layer of the oxide responds to the electrode potential applied.
- 公益社団法人 日本化学会の論文
著者
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Haruyama Shiro
Faculty of Engineering, Tokyo Institute of Technology
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Nakamura Toyohisa
Technical High School, Faculty of Engineering, Tokyo Institute of Technology