Alkali Treatment of Metallic Silicon Discharged from Grind Process of Silicon Wafer
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概要
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Metallic silicon suspension discharged from the grind process of silicon wafers consisted of metallic silicon of diameter ca. 240 nm, and the concentration of suspension was about 7.6 wt%. When 1 N NaOH solution was added to the suspension, H<SUB>2</SUB> gas of 1870 cm<SUP>3</SUP> per silicon of 1 g was generated as the following reaction, Si (s) +2OH<SUP>-</SUP>+H<SUB>2</SUB>O→SiO<SUB>3</SUB><SUP>2-</SUP>+2H<SUB>2</SUB> (g) ↑<BR>The generation rate of H<SUB>2</SUB> gas was independent of the silicon concentration in suspension, but decreased with a decrease in NaOH concentration. When anionic surfactant SDS or cationic surfactant CTABr was added to the metallic silicon suspension, the induction period was observed and the generation rate decreased. The generation quantity of H<SUB>2</SUB> gas decreased to 70% for CTABr of 5 wt% and 44% for SDS of 5 wt%.
- 一般社団法人 廃棄物資源循環学会の論文