槽内電位の効率的逆解析によるLSIめっき電流密度分布の推定

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Our research focuses on the techniques for monitoring the current density distribution of the real-time electroplating and a novel technique to estimate electroplating current densities on plated surfaces from the data of the electric potentials in the plating cells has been developed for LSI fabrication technology. However we have applied with only two dimensional analysis in our previous researches and it limits the application range of the proposed technique. In this research, we applied the monitoring technique with three dimensional analysis. Although the inverse analysis using the three dimensional analysis tends to be large scale, it is important for the practical usage to monitor current density on target region accurately and efficiently. Therefore we have developed an efficient inverse analysis technique for monitoring of the electroplating current density on the target region. For the selection of the measurement data and the reduction of the calculation amount for the inverse analysis, the proposed technique discards low sensitive components in the observation equation. The criteria of the discarding process are based on error ratios derived by singular values of the observation equation. In order to demonstrate the effectivity of the proposed technique, numerical simulations are performed for a sample polarization curve of copper in copper sulfate. The results show that this technique estimates the current density on target region accurately and its estimation is more efficient than that by the previous technique.

槽内電位の効率的逆解析によるLSIめっき電流密度分布の推定

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