電析法によるSiC複合Ni-P非晶質合金めっきの作製について
スポンサーリンク
概要
- 論文の詳細を見る
SiC composite Ni-P alloys were electrodeposited from normal Watts type baths in which 20-160g/L SiC powder was suspended. The SiC particles were easily codeposited using baths containing H3PO3. Uniformity of the particle dispersion in the deposit, and the soundness of the interface between SiC and the amorphous Ni-P matrix were examined by scanning and transmission electron microscopes. The thermal stability of the amorphous Ni-P matrix in the composite alloys was studied by differential scanning calorimetry. Vickers hardness tests were also done to study the effects of SiC content and heat treatment. It was found that 1) Composite Ni-P-SiC alloys containing 3.5-7.2wt%SiC were obtained by suspending 20-160g/L SiC in the electrolytic bath; 2) The crystallization temperature of the amorphous matrix decreased with an increase in SiC content; 3) The hardness of the amorphous Ni-P deposites tended to increase slightly with an increase in SiC content. These deposits hardened greatly after being heat treated up to 450°C.
- 社団法人 表面技術協会の論文
著者
関連論文
- MOSダイオードのプラズマ損傷とその軽減対策
- エピタキシャルAlN/Sapphireテンプレート上に成長したInGaN系LEDの評価(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- エピタキシャルAlN/Sapphireテンプレート上に成長したlnGaN系LEDの評価(進展する窒化物半導体光・電子デバイスの現状、及び一般)
- スパッタ法による酸化タンタル薄膜の形成とそれによるMOS基板のプラズマ損傷
- 電析Ni-P合金の析出機構について
- 電析法によるSiC複合Ni-P非晶質合金めっきの作製について
- 高周波希ガスプラズマのスパッタリング現象の研究