高周波プラズマCVD法によって形成された酸化ケイ素膜のガス透過性

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概要

• 論文の詳細を見る

• Silicon oxide films were prepared on polyethylene terephthalate film by radio-frequency plasma chemical vapor deposition using hexamethyl disiloxane (HMDSO) and oxygen gas and intentionally not heating the substrate.We studied the influence of the surface conditions of the substrate on gas permeability of films. We also studied the compositional and structual properties of films through infrared absorption, refractive indexing, and X-ray photo-electron spectroscopy (XPS).Silicon oxide films prepared by using HMDSO and oxygen gas plasma featured high gas-barrier properties, which were affected by the surface conditions of the substrate. We confirmed that it was necessary to bombard the substrate using HMDSO plasma as a pretreatment in order to obtain a silicon oxide film with higher gasbarrier properties.

• 社団法人 表面技術協会の論文

著者

• 並木 恒久

  東洋製罐グループ綜合研究所

• 平川 叙夫

  東洋製罐グループ綜合研究所

関連論文

• 高ガス遮断性二層ケイ素酸化膜及びそのプラズマ製膜技術
• 高周波プラズマCVD法によって形成された酸化ケイ素膜のガス透過性
• PETボトルへのケイ素酸化物被覆技術

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