窒化チタンの半導体特性とアノード溶解反応

概要

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Titanium nitrides were prepared by high-temperature nitriding and reactive ion plating, and their semiconducting properties were studied by photoelectric polarization. All the nitrides prepared by nitriding showed negative photopotential, which means that they exhibited n-type conduction. The magnitude of the photopotential, however, varied depending on the nitriding temperature, form -10-5∼-10-4V at 773∼873K to about -10-7V at 973∼1473K, and the properties of TiN (N=47.12at%) prepared by reactive ion plating were similar to those of the latter. Subsequently, the dissolution reaction of titanium nitride in sulfuric acid solution was inferred from the semiconducting properties and valency, which could be calculated from the quantity of electricity and the amount of titanium dissolved during potentiostatic polarization. The lower nitride Ti2 N dissolved according to the process Ti2N+4H+=2Ti3++NH4++3e-, whereas with the higher nitride TiN the reaction was assumed to involve Ti+. Light irradiation of the surfaces of the both nitrides generated a reaction involving positive holes.
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