パワーMOSFETにオンチップ化できる電界効果抵抗を利用した高精度電流検出方式

概要

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Current sensing function is indispensable to modern intelligent power semiconductor devices to detect whether or not a load is driven at a predetermined power level and/or an overcurrent at the time of overload, in order to protect the load and the power device.In this paper, a new current sensing device technology is presented firstly, in which the operation principle is based on detecting voltage drop through a field effect resistance (FER) consisting of mainly channel resistance in DMOSFET. Our new current sensing device consists of DMOS, FER & voltage sensing cell, and lateral MOSFET operated as a temperature compensation resistor in a same chip. The FER-cell has the same structure as DMOS cell, and lateral MOSFET is electrically isolated from substrate by p-n junction. The accuracy of current sensing is within ±2% in a temperature range from -40 to 150°C.The new current sensing device technology which can be integrated easily into power MOSFETs realizes intelligent power MOSFETs with high accurate current sensing and control in a wide temperature range.
社団法人電気学会の論文