Distribution of post-breakdown resistance of MOSTFETs

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概要

• 論文の詳細を見る

• In this paper, a post-breakdown resistance value of antifuse cells has been calculated with respect to breakdown spots. Also, the effect of body doping concentration and source/drain abruptness on the post-breakdown resistance has been observed in the case of gate underlap and overlap structures. Based on simulation results, we have proposed some ways of making the post-breakdown resistance distribution uniform.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Choi Woo

  Department of Electronic Engineering, Sogang Univ.

• Lee Min

  Department of Electronic Engineering, Sogang Univ.

関連論文

• Distribution of post-breakdown resistance of MOSTFETs

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