Si (111) 化学処理面の汚染

概要

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The Auger electron spectrometer of LEED type was constructed for studies of impurities on chemically etched Si (111) surfaces. Using this apparatus, the growth of oxidized layers on silicon surfaces with chemical treatments was investigated by changes of the Auger peaks height of Si 90 eV from elmental Si and of Si 77 eV from oxidized Si. The Auger peaks height of Si 77 eV and O 520 eV increased progressively with the formation of oxidized layers, on the other hand, that of Si 90 eV decreased. The thickness of oxidized layers formed on silicon surfaces could be compared relatively with the Auger peaks height of Si 90 eV and Si 77 eV. The amount of carbon contamination varied with chemical treatments, and its contamination on oxidized silicon surface was lower than that on HF etched silicon surface. This phenomenon was caused by the difference of absorption activity for CO or CO<SUB>2</SUB> gas molecules in vacuum system. Heating above 1000°C for 1 minute in 10<SUP>-8</SUP> Torr though the impurities i. e, oxygen and carbon on chemically etched silicon surfaces decreased rapidly, a small amount of carbon remained on the HF etched silicon surface.
日本真空協会の論文