LiAlのサンドウィッチ状蒸着
スポンサーリンク
概要
- 論文の詳細を見る
A method for crystallization of LiAl compound has been studied in films deposited on to glass substrates at 350°C in vacuum of about10<SUP>-6</SUP> Torr. Good compounds of the films 1μ thick are obtained after the films are annealed at the substrate temperature of 350°C for more 90min, if the evaporation is made in order of Al, Al+Li and Al at the same temperature; the co-evaporated Al and Li are sandwiched between the Al films. The degree of crystallization of the films has been examined by electron diffraction and electric conductivity measurement.<BR>The crystallized films show the temperature dependence of the conductivity of “Semiconductor” at temperatures above about 200°C. The smallest conductivity obtained at room temperature is 2×10<SUP>3</SUP>Ω<SUP>-1</SUP>cm<SUP>-1</SUP>, where the purity of the Li-component of the compound is 99.8% and that of the Al-componentof it is 99.99%.
- 日本真空協会の論文