イオン注入時に生じる表面汚染層のESCA測定
スポンサーリンク
概要
- 論文の詳細を見る
Surface contamination of silicon produced by ion implantation is examined by ESCA and IMA, and following results are disclosed. The contaminant film thickness can be evaluated by using ESCA. Deposition rate of the film increases with increase of ion current density and partial pressure of hydrocarbons in the vacuum system, and decrease of ion energy and substrate temperature. The contaminant film is very tenacious. Heat treatment in air can remove the film, but heat treatment in vacuum cannot. Surface contamination produced by ion implantation is formed by polymerization of hydrocarbon molecules, mainly originated from diffusion pump oil, caused by high energy ion bombardment.
- 日本真空協会の論文