GaP, GaAs-1xPxの分子線エピタキシャ, ル成長

概要

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Epitaxial films of GaP and GaAs-1xPx were grown on (100) -oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 1530 Å/min the deposited GaP and GaAs1-xPx were single crystalline at the substrate temperature, T, of 550 _??_ Ts_??_600°C and 540 _??_ Ts _??_ 600°C, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, x, of GaAs1-xPx is dependent both substrate temperature, Ts, and the intensity ratio of P to As molecules, and the rate of decrease of x with Ts, - dx/d Ts, is 0.003°C-1 for all the intensity ratio concerned (np/nAs = 211). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
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