GaP, GaAs<SUB>-1<I>x</I></SUB>P<SUB><I>x</I></SUB>の分子線エピタキシャ, ル成長
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Epitaxial films of GaP and GaAs<SUB>-1<I>x</I></SUB>P<SUB><I>x</I></SUB> were grown on (100) -oriented GaP substrates by molecular beam epitaxy. According to evaluation of crystallographic quality by RHEED and SEM, at the deposition rate of 1530 Å/min the deposited GaP and GaAs<SUB>1-x</SUB>P<SUB>x</SUB> were single crystalline at the substrate temperature, <I>T</I>, of 550 _??_ <I>T</I><SUB>s</SUB>_??_600°C and 540 _??_ <I>T</I><SUB>s</SUB> _??_ 600°C, respectively. IMA and photoluminescence studies show the epitaxial films include few impurities and few defects. Composition ratio, <I>x</I>, of GaAs<SUB>1-<I>x</I></SUB>P<SUB><I>x</I></SUB> is dependent both substrate temperature, <I>T</I><SUB>s</SUB>, and the intensity ratio of P to As molecules, and the rate of decrease of <I>x</I> with <I>T</I><SUB>s</SUB>, - d<I>x</I>/d <I>T</I><SUB>s</SUB>, is 0.003°C<SUP>-1</SUP> for all the intensity ratio concerned (<I>n</I><SUB>p</SUB>/<I>n</I><SUB>As</SUB> = 211). The sticking coefficient of P is found to vary inversely proportional to substrate temperature.
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