Si膜上のCr蒸着膜の抵抗特性 (I)

概要

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Vacuum-deposited films of some metals have been used for the resistors in mictocireuits. However, the resistance characteristics of very thin metal films are not always satisfactory for this purpose, because they are often unstable and have poor reproducibility. In this study, it was found that the chromium films which were evaporated on the thin silicon base layers deposited onto glass surfaces had more stable resistance characteristics than those usually deposited on glass substrates. The resistance of the formers, up to 100KΩ per square, was proved to be quite stable even when they were kept at 300°C in vacuum after deposition. The change of the resistance of these films being coated with further protective silicon monoxide films was less than 5 per cent in the range of film resistance from 1KΩ to 60KΩ per square as the results of the aging test at 200°C in air for 1500 hours. The resistivities of these films were lower than those of usual chromium films upto 300Å in thickness. Therefore, it may be supposed that the structures of the chromium films deposited on silicon base layers are compact even when they are as thin as about 10Å.
日本真空協会の論文