スパッタSiO<SUB>2</SUB>薄膜の不均一エッチング
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概要
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Planar magnetron rf-sputtering apparatus was used for the deposition of SiO<SUB>2</SUB> films on silicon substrates. An anomalous etching phenomenon such as the sputtered SiO<SUB>2</SUB> film was etched rapidly in part of it was found, the occurence of whi ch depended mainly on the incidence angle of the sputtered materials from target. Significant differences of stoichiometory and composition elements between the cegions of high and low etching rate were not observed.
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