角度研磨法を用いた深さ方向高分解能オージェ分析とその半導体素子への応用

概要

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The element in-depth profiles have been measured by scanning Auger electron microscopy in conjunction with the angle-lap profiling method, instead of the conventional Auger sputter profiling method. The angle-lap profiling method has advantages that the depth resolution is independent of depth below the surface and that there is no necessity for taking account of sputter broadening effect which complicates the sputter profiling analysis. It is shown that the actual interface width can be obtained by the correction taking account of several broadening factors such as Auger electron escape depth, incident electron beam diameter and surface roughness induced by angle-lapping. This profiling method has applied to the analysis of InGaAsP/InP double-hetero interface and GaAs ohmic contact reaction.
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