イオンビームエッチングにおける再付着効果のシミュレーション
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概要
- 論文の詳細を見る
Redeposition effect is one of the most important factors in determining profiles of fine patterns delinated by ionbeam etching. A three-dimensional simulation of pattern profiles based on the redeposition effect was carried out, first, using revolution ellipsoids as angular distributions of sputtered atoms, and secondly, using experimentally obtained distributions. Consequently, pattern width difference between mask and substrate decreases as the angular distribution changes from undercosine to overcosine. The pattern width difference, which gives a maximum value the bottom of etched patterns, is almost independent of pattern gap width. Pattern sidewalls become steeper with increasing gap width or with decreasing etched depth. The simulated pattern profiles are in good agreement with the experimental results.
- 日本真空協会の論文