イオン打込み層のランプ・アニール
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概要
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Recently, various transient annealing technologies have been intensively invesigated on activation of ionimplanted layers, using laser, electron beam, flash lamp, high-intensity arc-lamp, and solar radiation. But the application of these annealing technologies to device processing is still in its infancy.<BR>This paper describes an application of halogen lamp annealing to the activation of ion-implanted silicon and to CMOS LSI processing.<BR>The samples were heated with halogen lamps in nitrogen gas at an atmospheric pressure to 1200 °C for five seconds. This annealing activated the boron ions and phosphorus ions implanted layers and realized the same sheet resistivities as the furnace annealing (100 °C, 20 min.) with negligible dopant redistribution. 256 K CMOS ROM was fabricated using the halogen lamp annealing.<BR>The advantage of halogen lamp annealing technology was shown in place of furnace annealing without changing conventional processing steps.