高周波イオンプレーティング法によるモリブデン・シリサイド膜の形成
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概要
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Thin films of molybdenum silicide were deposited on oxidized silicon wafers by RF ion plating. Molybdenum and silicon were supplied by electron beam evaporation and SiH<SUB>4</SUB> gas, respectively. Argon gas was used for the stabilization of glow discharge. The Si/Mo atomic ratio in the film was changed from 1.4 to 2 by controlling the Mo evaporation rate. The effects of deposition condition, substrate potential, on film properties were investigated by X-ray diffraction analysis, sheet resistance and stress measurements. It was found that the films deposited at -2kV substrate potential are polycrystalline partly before annealing and change to be polycrystalline wholly after annealing for 5 min at 1000°C. The annealed films show good adhesion to oxidized silicon, low resistivity, and low film stress.
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