低速K原子線をあてたSi表面におけるK濃度分析

概要

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Si (111) surfaces were exposed to neutral potassium atomic beams of very low energy (a few tens of meV), poduced by passing through a mechanical velocity selector. Potassium concentration in the Si specimens was depth-profiled by the use of an ion microanalyzer (IMA). Since the primary ion beam of IMA was found to cause the potassium adsorbed on the surface to migrate into the substrates much deeper than usually expected, prior to IMA analysis the substrates were cleaned with pure water to remove potassium from the surface. Potassium concentration of some samples thus treated was significantly higher than the background to a considerable depth (approx. 1 μm). The results also indicate that the potassium atom migration into Si crystals seems to be enhanced by increasing the velocity of incident potassium atoms (up to 400 m/s).
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