ポリイミド膜の反応性イオンエッチング
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概要
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The reactive ion etching of a polyimide film was investigated about undercut and etch residue on the etched surface. The pattern undercut results from the reaction proceeding between the polyimide film and the oxygen radical, and the etch residue is originated from the redeposition of non-volatile particles sputtered from the etching table. In O<SUB>2</SUB> reactive ion etching using the carbon etching table, the carbon reacts with oxygen radicals and changes to CO or CO<SUB>2</SUB> so as to reduce the pattern undercut and the etch residue simultaneously. The undercut width of the polyimide pattern is less than 0.04μm, so that the sub-micron x-ray mask absorber pattern is accurately obtained by electroplating using the polyimide pattern as the plating mask
- 日本真空協会の論文