大口径半導体ウェ-ハ表面処理装置

概要

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An ultra-high vacuum apparatus for surface cleaning, thin film deposition and surface analysis is successfully developed for three inch diameter wafers. The apparatus consists of four chambers; sample entry chamber, sample transport chamber, surface treatment chamber, and surface analysis chamber, all of which are evacuated with oil free pumps. The sample transport chamber is newly designed to introduce sample directly into both surface treatment chamber and analysis chamber, in order to prevent undesired residual gas incorporation between the two chambers. The transport mechanism will be applicable to a future vacuum production line. Newly designed sample heating system is fabricated using tungsten wire heater and divided sapphire surroundings, which can elevate sample temperature up to 1200°CC.<BR>Si wafers rinsed in various chemical solution were cleaned by heat treatment in the sample treatment chamber. Surface cleannes was examined by RHEED and AES measurements. Cleaned surface appeared at temperature from 775°C to 830°C, depending on chemical composition of the solutions.