酸素吸着ZnSe-Au界面のXPS,ELS,AESによる研究
スポンサーリンク
概要
- 論文の詳細を見る
An apparatus for measurements of X-ray photoemission spectroscopy (XPS), electron-energy loss spectroscopy (ELS), Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED) under ultrahigh vacuum conditions has been constructed in order to investigate the influence of gas exposure on metal-semiconductor interfaces. The interfacial chemical reaction and band bending of the vacuum-cleaved ZnSe (110) surface with adsorbed oxygen during the Schottky barrier formation have been investigated with this setup. When less than a monolayer of Au coverage was deposited on the oxides layers produced by the photoenhanced oxidation method, the removal of SeO<SUB>2</SUB> and breaking of Zn-O bonding were observed at room temperature, leading to the same pinning position of the interface Fermi level as that for the ZnSe (110) -Au interface without intermediate oxides layers. Gold forms homogeneous layers on the oxidized ZnSe (110) surface rather than islands on the atomically clean surface.
- 一般社団法人 日本真空学会の論文