Ge35S65蒸着薄膜の構造に及ぼす造膜速度の影響並びに光・熱による構造変化

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Films were prepared by evaporating Ge30S70 glass fragment in a vacuum at various deposition rates (1.7-400 Å/sec) using a chimney type crucible. The composition in the films was found to be 35±1 at% for Ge and 65±1 at% for S even if the deposition rate is varied. The influence of the deposition rate on the structure of Ge35S65 film were studied by ESR, X-ray diffraction and optical transmission measurements. The Ge35S65 film contains homopolar bonds of Ge-Ge and S-S in addition to Ge-S heteropolar bond. The randomness of the network structure of the film increases with increasing the deposition rate. This study suggests that the deposition rate has different effect on the local structure, the optical absorption properties and the medium range structure of the film, respectively. The structural changes in the Ge35S65 film resulting from illumination at room temperature and heat-treatment were also studied. The illumination changes the short range and medium range structures of the film and the band tail disorder decreases. On the other hand, the illumination increases the local disorder around Ge-Ge bond in the film. The heat-treatment decreases the all structural disorders of the film.
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