置換秤量法によるSiO_2膜厚の高精度測定

概要

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Since SiO<SUB>2</SUB> film has good characteristics for surface stabilization, it is useful for the fabrication process of semiconductor. Its thickness is one of the important factors in the determination of the surface condition, and many investigations on the thickness measurement have been carried out. In this report, we apply substitution weighing method to the thickness measurement of SiO<SUB>2</SUB> film fabricated by thermal oxidation. The high-accuracy measurement can be made using the substitution weighing method, because it can cancel out the systematic effect due to the drift of the balance indication and non-linearity in the balance sensitivity. In addition, we compare the results from the substitution weighing method with that from ellipsometry. It is confirmed that these results agree within the estimated uncertainty for five samples with the average film thickness ranging from 1.3 nm to 115 nm. From this agreement, we conclude that the several assumptions and physical quantities used in these measurements are consistent with each other.
日本真空協会の論文
2003-03-20